Transient reflecting grating study of ion-implanted semiconductors
نویسندگان
چکیده
Surface modification of Si(100) wafers induced by argon-ion implantation (ion energy, 300keV; dose, 10" 10'' atoms/cm2) was investigated using a transient reflecting grating technique. Effects of the implantation on velocity, intensity and onset time of surface acoustic waves (SAW) were discussed accompanying the acoustic anisotropy. SAW velocity dispersion was also examined for one of the lightly ionimplanted sample (dose, 1011 atoms/cm2).
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